Prof. Na Ren, Zhejiang University, China
In 2015, Na Ren obtained her doctor's degree from the school of electrical engineering of Zhejiang University. From 2016 to 2019, she worked as a postdoctoral fellow at the University of California, Los Angeles. In 2019, she joined the school of electrical engineering of Zhejiang University as an associate professor. In 2020, she was also employed to the Advanced Semiconductor Research Institute of Zhejiang University Hangzhou Global Scientific and Technological Innovation Center, and was selected into Young Talent Plan. She has undertaken a number of scientific research projects, such as the National Natural Science Foundation of China, the “Pioneer” and “Leading Goose” R&D program of Zhejiang Province, the Delta Power Electronics Science and education development fund, and the SMIC joint laboratory. She has been committed to the research of silicon carbide power semiconductor devices, including device physical mechanism, structure design, process technology, chip development, device testing and failure analysis, performance and reliability optimization, and has achieved a series of research results. About 60 papers were published in international well-known journals and conferences in the field of devices, including 32 SCI papers. She was authorized by 3 U.S. patents and 7 Chinese invention patents, and won the 2020 Materials Journal editor’s choice award, 2017 APEC academic conference outstanding presentation award, and 2021 IEEE wipda Asia Conference best paper award. She led a team to carry out the research and development of silicon carbide power devices, and cooperated with domestic and foreign enterprises to develop silicon carbide product technology. The cooperative enterprises include state grid, Huawei, China Resources, SMIC, and CETC 55 Institute, etc.
2015年于浙江大学电气工程学院获得博士学位，2016~2019年期间在美国加州大学洛杉矶分校做博士后，2019年入职浙江大学电气工程学院成为预聘-长聘制副研究员，2020年双聘至浙江大学杭州国际科创中心先进半导体研究院，并入选浙江大学杭州国际科创中心首批青年人才卓越计划，承担了国家自然科学基金、浙江省重点研发“尖兵计划”和“领雁计划”课题、台达电力电子科教发展基金、中芯绍兴联合实验室等多项科研项目。一直致力于碳化硅功率半导体器件的研究，包括器件物理机制、结构设计、工艺技术、芯片研制、器件测试与失效分析、性能与可靠性优化等方向，并取得了一系列研究成果。在器件领域国际知名期刊与会议上共发表约60篇论文，其中SCI论文32篇，获得了3项美国专利和7项中国发明专利授权，并获得2020年Materials期刊杰出论文奖、2017年APEC学术会议杰出报告奖、2021年IEEE Wipda Asia会议杰出论文奖。参与建成国内高校唯一的全套先进的6英寸SiC芯片工艺线，领导团队开展碳化硅功率器件的研发工作，并积极与国内外企业合作开发碳化硅产品技术，合作企业包括国网、华为、华润、中芯绍兴、中电科55所等等。